High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diodeTOBA, H; NOSU, K.Electronics Letters. 1987, Vol 23, Num 5, pp 188-190, issn 0013-5194Article

Observation of room temperature excitons in GaSb-AlGaSb multi-quantum wellsMIYAZAWA, T; TARUCHA, S; OHMORI, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L200-L202, issn 0021-4922, 2Article

Room temperature operation of Al_0.17Ga_0.83Sb/GaSb multi-quantum well lasers grown by molecular beam epitaxyOHMORI, Y; TARUCHA, S; HORIKOSHI, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp L94-L96, issn 0021-4922Article

Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb (001) surfaces grown by molecular-beam epitaxyRAISIN, C; DA SILVA, F. W. O; LASSABATERE, L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 68-74, issn 0734-211X, 7 p.Article

Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron SpectroscopyBANERJEE, Koushik; GHOSH, Siddhartha; PLIS, Elena et al.Journal of electronic materials. 2010, Vol 39, Num 10, pp 2210-2214, issn 0361-5235, 5 p.Article

Préparation et étude de photodiodes diffusées P⁺N à Ga Al (As) Sb = Preparation and study of GaAl(As)Sb p⁺n diffused photodiodesBELATOUI, Tayeb.1985, 127 pThesis

Improved photoluminescence from electrochemically passivated GaSbSALESSE, A; ALABEDRA, R; CHEN, Y et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 413-418, issn 0268-1242Article

Influence des dislocations sur la grandeur du courant inverse des jonctions p-n de solutions solides GaAs1-xSbxKARYAEV, V. N; SAVEL'EV, I. G.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 7, pp 1205-1210, issn 0015-3222Article

Recent investigations on the growth of antimony based semiconductorsBHAT, H. L.SPIE proceedings series. 1998, pp 221-227, isbn 0-8194-2756-X, 2VolConference Paper

2E_g transitions in GaSb-AlSb quantum-well structuresFORCHEL, A; CEBULLA, U; TRÄNKLE, G et al.Physical review letters. 1986, Vol 57, Num 25, pp 3217-3220, issn 0031-9007Article

DIVERGENCE DUE A LA DIFFRACTION DU RAYONNEMENT DES LASERS HETEROGENES A INJECTION A BASE DE SOLUTIONS SOLIDES QUATERNAIRES, ISOPERIODIQUES AVEC GASBDRAKIN AE; ELISEEV PG; SVERDLOV BN et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 949-954; BIBL. 13 REF.Article

Compositional relation of GaAs_xSb_1-x and related compounds in metalorganic chemical vapor deposition using tBAs and TMSb as group V precursorsWATANABE, N; IWAMURA, Y.Japanese journal of applied physics. 1996, Vol 35, Num 1A, pp 16-21, issn 0021-4922, 1Article

Analysis of threshold current density in 2•2 μm GaInAsSb/GaAlAsSb.GaSb DH lasersBROSSON, P; BENOIT, J; JOULLIE, A et al.Electronics Letters. 1987, Vol 23, Num 8, pp 417-419, issn 0013-5194Article

THE DEPENDENCE OF SURFACE MORPHOLOGY OF GASB- AND AL_XGA_1-XSB EPITAXIAL LAYERS ON THE CONDITIONS OF LPE GROWTHYORDANOVA IM; PRAMATAROVA LD.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 6; PP. 835-841; ABS. RUS; BIBL. 5 REF.Article

Nanosecond pulsed laser induced self-organized nano-dots patterns on GaSb surfaceYOSHIDA, Yutaka; OOSAWA, Kazuya; WAJIMA, Jyunya et al.Applied surface science. 2014, Vol 307, pp 24-27, issn 0169-4332, 4 p.Article

Fabrication and investigation of nanocomposites of conducting polymers and GaSb nanocrystalsBAKUEVA, Ludmila; MUSIKHIN, Sergei; SARGENT, Edward H et al.Surface science. 2003, Vol 532-35, pp 828-831, issn 0039-6028, 4 p.Conference Paper

Optoelectronic and dielectric properties of GaAs_xSb_1-x ternary alloysMEZRAG, F; AOUINA, N. Y; BOUARISSA, N et al.Journal of materials science. 2006, Vol 41, Num 16, pp 5323-5328, issn 0022-2461, 6 p.Article

Field-effect transistor with ap-n junction gate, made of GaAs_1-x-ySb_xP_y solid solutionsVUL', A. YA; VUL', S. P; SAIDASHEV, I. I et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 10, pp 1034-1035, issn 0038-5700Article

Light scattering determinations of band offsets in semiconductor heterostructuresMENENDEZ, J; PINCZUK, A.IEEE journal of quantum electronics. 1988, Vol 24, Num 8, pp 1698-1711, issn 0018-9197Article

Sur l'élaboration par jets moléculaires et les propriétés optiques d'hétérojonctions GaAlSb/GaSb = On elaboration by molecular beams and optical properties of GaAlSb/GaSb heterojunctionsRAISIN, C; BABAKOR SAGUINTAAH; TEGMOUSSE, H et al.Annales des télécommunications. 1986, Vol 41, Num 1-2, pp 50-58, issn 0003-4347Article

An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodesHEINZ, C; SCHMIDT AUF ALTENSTADT, W.Journal of crystal growth. 1984, Vol 67, Num 2, pp 393-396, issn 0022-0248Article

RECENT DEVELOPMENTS FOR THE ALGAASSB CELLTIMMONS ML; BEDAIR SM; MARKUNAS RJ et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 663-668; BIBL. 10 REF.Conference Paper

SPECTRE DE PHOTOEMISSION DE L'ALLIAGE TERNAIRE GA_1-XAL_XSBANCE C; AMAMOU A.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 441-449; ABS. ENG; BIBL. 26 REF.Article

Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 01)TINKHAM, Brad P; BRAUN, Wolfgang; KAGANER, Vladimir M et al.Surface science. 2007, Vol 601, Num 3, pp 814-821, issn 0039-6028, 8 p.Article

Thermal resistivity of quaternary solid solutions InGaSbAs and GaAlSbAs lattice-matched to GaSbBOTH, W; BOCHKAREV, A; DRAKIN, A et al.Electronics Letters. 1990, Vol 26, Num 7, pp 418-419, issn 0013-5194, 2 p.Article